Characterization of Silicon Carbide Metal Oxide Semiconductor Capacitors

Characterization of Silicon Carbide Metal Oxide Semiconductor Capacitors

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When applied to the SiC MOS capacitor, the pulsed MOS-C technique involves significant nonidealities which preclude its use from daily process monitoring. However, the non-equilibrium MOS-C has proven a very useful structure to research and further understand the generation lifetime behavior of SiC. This structure has also proven useful for the study of nonidealities, such as NBTI and leakage current, which can affect SiC MOSFETs.Band diagram of a 4H-3C-4H stacking fault. Band offset values from ref. [58] ...... 28 2.9. Nomarski interference contrast micrograph of ... Band diagram of Si, 4H, and 6H-SiC compared to SiO2. Band offsets from ref. [66] and references therein.


Title:Characterization of Silicon Carbide Metal Oxide Semiconductor Capacitors
Author: Matthew J. Marinella
Publisher:ProQuest - 2008
ISBN-13:

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